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No Longer Manufactured
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF7473PBF
Order Code9102884
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id6.9A
Drain Source On State Resistance0.026ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5.5V
Power Dissipation2.5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The IRF7473PBF is a HEXFET® single N-channel Power MOSFET offers fully characterized avalanche voltage and current. It is suitable for telecom and data-com 24 and 48V input DC-to-DC converter.
- Ultra-low ON-resistance
- High speed switching
- Low gate drive current due to improved gate charge characteristic
- Improved avalanche ruggedness and dynamic dV/dt
- Industry standard pin-out
Applications
Power Management, Motor Drive & Control, Communications & Networking
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
6.9A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
2.5W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.026ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
5.5V
No. of Pins
8Pins
Product Range
-
Technical Docs (1)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.031751