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IRF7473TRPBF
Power MOSFET, N Channel, 100 V, 6.9 A, 0.026 ohm, SOIC, Surface Mount
1 total stock globally
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Available until stock is exhausted
| Quantity | Price (Incl GST) |
|---|---|
| 1+ | $2.900 ($3.335) |
| 10+ | $2.340 ($2.691) |
| 100+ | $1.600 ($1.840) |
| 500+ | $1.280 ($1.472) |
| 1000+ | $1.020 ($1.173) |
| 5000+ | $1.020 ($1.173) |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$2.90 ($3.34 inc GST)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF7473TRPBF
Order Code2803411
Product RangeHEXFET
Also Known AsIRF7473TRPBF, SP001555418
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id6.9A
Drain Source On State Resistance0.026ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5.5V
Power Dissipation2.5W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeHEXFET
Qualification-
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Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
6.9A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
2.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2018)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.026ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
5.5V
No. of Pins
8Pins
Product Range
HEXFET
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001