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IRF7905TRPBF
Dual MOSFET, N Channel, 30 V, 30 V, 7.8 A, 7.8 A, 0.0174 ohm
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ManufacturerINFINEON
Manufacturer Part NoIRF7905TRPBF
Order Code2803418RL
Product RangeHEXFET Series
Also Known AsIRF7905TRPBF, SP001570570
Technical Datasheet
110 total stock globally
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110 Delivery in 3-5 Business Days(UK stock)
Available until stock is exhausted
| Quantity | Price (Incl GST) |
|---|---|
| 10+ | $1.470 ($1.6905) |
| 100+ | $1.230 ($1.4145) |
| 500+ | $0.983 ($1.1304) |
| 1000+ | $0.740 ($0.851) |
| 5000+ | $0.726 ($0.8349) |
Price for:Each (Supplied on Cut Tape)
Minimum: 10
Multiple: 1
$14.70 ($16.90 inc GST)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF7905TRPBF
Order Code2803418RL
Product RangeHEXFET Series
Also Known AsIRF7905TRPBF, SP001570570
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id7.8A
Continuous Drain Current Id N Channel7.8A
On Resistance Rds(on)0.0174ohm
Continuous Drain Current Id P Channel7.8A
Drain Source On State Resistance N Channel0.0174ohm
Transistor MountingSurface Mount
Drain Source On State Resistance P Channel0.0174ohm
Rds(on) Test Voltage10V
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max1.8V
No. of Pins8Pins
Power Dissipation Pd2W
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max150°C
Product RangeHEXFET Series
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2018)
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Product Overview
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
7.8A
Continuous Drain Current Id P Channel
7.8A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.8V
Power Dissipation Pd
2W
Power Dissipation P Channel
2W
Product Range
HEXFET Series
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2018)
Channel Type
N Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
7.8A
On Resistance Rds(on)
0.0174ohm
Drain Source On State Resistance N Channel
0.0174ohm
Drain Source On State Resistance P Channel
0.0174ohm
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001