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IRF7907TRPBF
Dual MOSFET, N Channel, 30 V, 30 V, 11 A, 11 A, 0.0098 ohm
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ManufacturerINFINEON
Manufacturer Part NoIRF7907TRPBF
Order Code2725920RL
Product RangeHEXFET Series
Also Known AsSP001566462
Technical Datasheet
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| Quantity | Price (Incl GST) |
|---|---|
| 50+ | $1.040 ($1.196) |
| 250+ | $0.828 ($0.9522) |
| 1000+ | $0.739 ($0.8498) |
| 2000+ | $0.683 ($0.7854) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
$104.00 ($119.60 inc GST)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF7907TRPBF
Order Code2725920RL
Product RangeHEXFET Series
Also Known AsSP001566462
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds30V
Continuous Drain Current Id11A
Drain Source Voltage Vds P Channel30V
On Resistance Rds(on)0.0098ohm
Continuous Drain Current Id N Channel11A
Continuous Drain Current Id P Channel11A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.0098ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.0098ohm
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max1.8V
Power Dissipation Pd2W
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max150°C
Product RangeHEXFET Series
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
Dual N-channel HEXFET® power MOSFET for POL converters in notebook computers, servers, graphics cards, game consoles and set-top box.
- Very low RDS(on) at 4.5V VGS
- Low gate charge
- Fully characterized avalanche voltage and current
- Improved body diode reverse recovery
- 100% tested for RG
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id
11A
On Resistance Rds(on)
0.0098ohm
Continuous Drain Current Id P Channel
11A
Drain Source On State Resistance N Channel
0.0098ohm
Drain Source On State Resistance P Channel
0.0098ohm
Gate Source Threshold Voltage Max
1.8V
No. of Pins
8Pins
Power Dissipation P Channel
2W
Product Range
HEXFET Series
Automotive Qualification Standard
-
SVHC
No SVHC (21-Jan-2025)
Channel Type
N Channel
Drain Source Voltage Vds
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
11A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
Power Dissipation Pd
2W
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00019