IRFB4019PBF
Power MOSFET, N Channel, 150 V, 17 A, 0.095 ohm, TO-220AB, Through Hole
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| Quantity | Price (Incl GST) |
|---|---|
| 1+ | $4.150 ($4.7725) |
| 10+ | $2.010 ($2.3115) |
| 100+ | $1.790 ($2.0585) |
| 500+ | $1.440 ($1.656) |
| 1000+ | $1.210 ($1.3915) |
| 5000+ | $1.190 ($1.3685) |
Product Information
Product Overview
IRFB4019PBF is a digital audio MOSFET in a 3-pin TO-220AB package. This digital audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery, and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust, and reliable device for Class-D audio amplifier applications.
- Drain-to-source voltage is 150V
- Gate-to-source voltage is ±20V
- Continuous drain current is 17A VGS at 10V, Tc = 25°C
- Static drain-to-source on-resistance RDS(on) is 95mohm max
- Low QG and QSW for better THD and improved efficiency
- Low QRR for better THD and lower EMI
- Can deliver up to 200W per channel into 8ohm load in half-bridge configuration amplifier
- Operating temperature range from -55 to 175°C
Technical Specifications
N Channel
17A
TO-220AB
10V
80W
175°C
-
No SVHC (25-Jun-2025)
150V
0.095ohm
Through Hole
4.9V
3Pins
-
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate