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| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $2.480 | $2.48 |
| Quantity | Price (Incl GST) |
|---|---|
| 1+ | $2.480 ($2.852) |
| 10+ | $1.560 ($1.794) |
| 100+ | $1.010 ($1.1615) |
| 500+ | $0.785 ($0.9028) |
| 1000+ | $0.685 ($0.7878) |
| 5000+ | $0.672 ($0.7728) |
Product Information
Product Overview
The IRFR120NTRPBF is a HEXFET® fifth generation N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient device for use in a wide variety of applications. The package is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Power dissipation level of 1.5W is possible in a typical surface-mount application.
- Advanced process technology
- Fully avalanche rating
- Low static drain-to-source ON-resistance
- Dynamic dV/dt rating
Applications
Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
N Channel
9.4A
TO-252AA
10V
48W
175°C
-
No SVHC (25-Jun-2025)
100V
0.21ohm
Surface Mount
4V
3Pins
-
MSL 1 - Unlimited
Technical Docs (2)
Alternatives for IRFR120NTRPBF
1 Product Found
Associated Products
3 Products Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate
