Print Page
IRFU120NPBF
Power MOSFET, N Channel, 100 V, 9.4 A, 0.21 ohm, TO-251AA, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIRFU120NPBF
Order Code8650004
Also Known AsSP001557678
Technical Datasheet
6,777 total stock globally
Need more?
6777 Delivery in 3-5 Business Days(UK stock)
| Quantity | Price (Incl GST) |
|---|---|
| 1+ | $1.730 ($1.9895) |
| 10+ | $0.749 ($0.8614) |
| 100+ | $0.680 ($0.782) |
| 500+ | $0.639 ($0.7348) |
| 1000+ | $0.543 ($0.6244) |
| 5000+ | $0.517 ($0.5946) |
Price for:Each
Minimum: 1
Multiple: 1
$1.73 ($1.99 inc GST)
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFU120NPBF
Order Code8650004
Also Known AsSP001557678
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id9.4A
Drain Source On State Resistance0.21ohm
Transistor Case StyleTO-251AA
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation48W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
Product Overview
Single N-channel power MOSFET in a I-Pak package. It utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.
- Advanced process technology
- Fast switching
- Fully avalanche rated
- Planar cell structure for wide SOA
- Product qualification according to JEDEC standard
- Increased ruggedness
- High performance in low frequency applications
- Standard pinout allows for drop in replacement
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
9.4A
Transistor Case Style
TO-251AA
Rds(on) Test Voltage
10V
Power Dissipation
48W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.21ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
SVHC
Lead (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000696