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IRLML5203TRPBF
Power MOSFET, P Channel, 30 V, 3 A, 0.098 ohm, SOT-23, Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoIRLML5203TRPBF
Order Code1562528
Product RangeHEXFET Series
Also Known AsSP001558846
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 12 week(s)
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| Quantity | Price (Incl GST) |
|---|---|
| 1+ | $516.460 ($593.929) |
| 5+ | $457.990 ($526.6885) |
Price for:Reel of 3000
Minimum: 1
Multiple: 1
$516.46 ($593.93 inc GST)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRLML5203TRPBF
Order Code1562528
Product RangeHEXFET Series
Also Known AsSP001558846
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id3A
Drain Source On State Resistance0.098ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation1.25W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeHEXFET Series
Qualification-
Product Overview
The IRLML5203PBF is -30V single P channel HEXFET power MOSFET in Micro3 (SOT-23) package. This MOSFET features extremely low on resistance per silicon area, ruggedness, fast switching, as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications like battery management, portable electronics, PCMCIA cards and ideal for applications where printed circuit board space is at a premium.
- Drain to source voltage (Vds) of -30V
- Gate to source voltage of ±20V
- On resistance Rds(on) of 98mohm at Vgs -10V
- Power dissipation Pd of 1.25W at 25°C
- Continuous drain current Id of -3A at vgs -10V and 25°C
- Operating junction temperature range from -55°C to 150°C
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
3A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
1.25W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.098ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
No. of Pins
3Pins
Product Range
HEXFET Series
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.099