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No Longer Manufactured
Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFH12N100F
Order Code1428804
Technical Datasheet
Channel TypeN Channel
Continuous Drain Current Id12A
Drain Source On State Resistance1.05ohm
Transistor Case StyleTO-247AD
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation300W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The IXFH12N100F is a 1000V N-channel Enhancement Mode Power MOSFET designed for laser driver, induction heating, switch mode power supplies and switching industrial applications.
- Double metal process for low gate resistance
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS) rated
- Low inductance offers easy to drive and protect
- Fast intrinsic rectifier
- Space-saving s
- High power density
Applications
Power Management, Industrial
Technical Specifications
Channel Type
N Channel
Drain Source On State Resistance
1.05ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
Continuous Drain Current Id
12A
Transistor Case Style
TO-247AD
Rds(on) Test Voltage
10V
Power Dissipation
300W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Great Britain
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Great Britain
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.009525