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| Manufacturer | IXYS SEMICONDUCTOR |
|---|---|
| Manufacturer Part No | IXFN170N10Copy |
| Order Code | 9359222 |
| Your Part Number | |
| Technical Datasheet |
No Longer Manufactured
Product Information
| Manufacturer | IXYS SEMICONDUCTOR |
|---|---|
| Manufacturer Part No | IXFN170N10Copy |
| Order Code | 9359222 |
| Technical Datasheet | |
| Channel Type | N Channel |
| Product Range | - |
Product Overview
The IXFN170N10 is a single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features low static drain-to-source ON-resistance HDMOS™ process and high power density. It is suitable for DC-to-DC converters, synchronous rectification, battery chargers, DC choppers, switch-mode and resonant-mode power supplies.
- International standard packages
- Rugged polysilicon gate cell structure
- Unclamped inductive switching (UIS) rating
- Low package inductance
- Easy to mount
- Space saving
- UL94V-0 Flammability rating
Applications
Power Management, Lighting
Technical Specifications
| Channel Type | N Channel |
|---|
| Product Range | - |
|---|
Technical Docs (1)
Legislation and Environmental
| Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin: | Germany Country in which last significant manufacturing process was carried out |
|---|---|
| Tariff No: | 85412900 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Weight (kg): | .039916 |