Print Page
IXFN200N10P
MOSFET Transistor, PolarFET, N Channel, 200 A, 100 V, 7500 µohm, 15 V, 5 V
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | IXYS SEMICONDUCTOR |
|---|---|
| Manufacturer Part No | IXFN200N10PCopy |
| Manufacturer Standard Lead Time | 24 weeks |
| Order Code | 1427322 |
| Product Range | Polar(TM) HiPerFET |
| Your Part Number | |
| Technical Datasheet |
1,542 total stock globally
Need more?
1,542 Delivery in 3-5 Business Days(UK stock)
| Quantity | Price (Incl GST) |
|---|---|
| 1+ | $61.200 ($70.380) |
| 5+ | $56.850 ($65.3775) |
| 10+ | $52.500 ($60.375) |
| 50+ | $48.150 ($55.3725) |
| 100+ | $43.800 ($50.370) |
Price for:Each
Minimum: 1
Multiple: 1
$61.20 ($70.38 inc GST)
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
| Manufacturer | IXYS SEMICONDUCTOR |
|---|---|
| Manufacturer Part No | IXFN200N10PCopy |
| Manufacturer Standard Lead Time | 24 weeks |
| Order Code | 1427322 |
| Product Range | Polar(TM) HiPerFET |
| Technical Datasheet | |
| Channel Type | N Channel |
| Continuous Drain Current Id | 200A |
| Drain Source Voltage Vds | 100V |
| Drain Source On State Resistance | 7500µohm |
| Transistor Case Style | ISOTOP |
| Rds(on) Test Voltage | 15V |
| Gate Source Threshold Voltage Max | 5V |
| Transistor Mounting | Module |
| Power Dissipation | 680W |
| Operating Temperature Max | 175°C |
| No. of Pins | 4Pins |
| Product Range | Polar(TM) HiPerFET |
| MSL | - |
| SVHC | To Be Advised |
Product Overview
The IXFN200N10P is a N-channel enhancement mode Power MOSFET features miniBLOC with aluminium nitride isolation, low RDS (on) HDMOSTM process, rugged polysilicon gate cell structure and unclamped inductive switching (UIS) rated.
- Fast intrinsic rectifier
- Rugged polysilicon gate cell structure
- Encapsulating epoxy meets UL94V-0, flammability classification
- Rugged polysilicon gate cell structure
- Easy to mount
- High power density
- Space savings
Applications
Power Management, Lighting
Technical Specifications
| Channel Type | N Channel |
|---|---|
| Drain Source Voltage Vds | 100V |
| Transistor Case Style | ISOTOP |
| Gate Source Threshold Voltage Max | 5V |
| Power Dissipation | 680W |
| No. of Pins | 4Pins |
| MSL | - |
| Continuous Drain Current Id | 200A |
|---|---|
| Drain Source On State Resistance | 7500µohm |
| Rds(on) Test Voltage | 15V |
| Transistor Mounting | Module |
| Operating Temperature Max | 175°C |
| Product Range | Polar(TM) HiPerFET |
| SVHC | To Be Advised |
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
| Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin: | Germany Country in which last significant manufacturing process was carried out |
|---|---|
| Tariff No: | 85412900 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | To Be Advised |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Weight (kg): | .03 |