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IXFN200N10P
MOSFET Transistor, PolarFET, N Channel, 200 A, 100 V, 7500 µohm, 15 V, 5 V
Image is for illustrative purposes only. Please refer to product description.
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFN200N10PCopy
Manufacturer Standard Lead Time23 weeks
Order Code142732202
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| Quantity | Price (Incl GST) |
|---|---|
| 1+ | $53.340 ($61.341) |
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$53.34 ($61.34 inc GST)
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Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFN200N10PCopy
Manufacturer Standard Lead Time23 weeks
Order Code142732202
Technical Datasheet
SVHCTo Be Advised
Product Overview
The IXFN200N10P is a N-channel enhancement mode Power MOSFET features miniBLOC with aluminium nitride isolation, low RDS (on) HDMOSTM process, rugged polysilicon gate cell structure and unclamped inductive switching (UIS) rated.
- Fast intrinsic rectifier
- Rugged polysilicon gate cell structure
- Encapsulating epoxy meets UL94V-0, flammability classification
- Rugged polysilicon gate cell structure
- Easy to mount
- High power density
- Space savings
Applications
Power Management, Lighting
Technical Specifications
SVHC
To Be Advised
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85412900
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.03