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IXFN24N100
MOSFET Transistor, N Channel, 24 A, 1 kV, 0.39 ohm, 10 V, 5.5 V
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | IXYS SEMICONDUCTOR |
|---|---|
| Manufacturer Part No | IXFN24N100Copy |
| Manufacturer Standard Lead Time | 24 weeks |
| Order Code | 4905568 |
| Your Part Number | |
| Technical Datasheet |
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42 Delivery in 3-5 Business Days(UK stock)
| Quantity | Price (Incl GST) |
|---|---|
| 1+ | $94.100 ($108.215) |
| 5+ | $88.240 ($101.476) |
| 10+ | $82.370 ($94.7255) |
| 50+ | $76.510 ($87.9865) |
Price for:Each
Minimum: 1
Multiple: 1
$94.10 ($108.22 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
| Manufacturer | IXYS SEMICONDUCTOR |
|---|---|
| Manufacturer Part No | IXFN24N100Copy |
| Manufacturer Standard Lead Time | 24 weeks |
| Order Code | 4905568 |
| Technical Datasheet | |
| Channel Type | N Channel |
| Continuous Drain Current Id | 24A |
| Drain Source Voltage Vds | 1kV |
| Drain Source On State Resistance | 0.39ohm |
| Rds(on) Test Voltage | 10V |
| Transistor Case Style | ISOTOP |
| Transistor Mounting | Module |
| Gate Source Threshold Voltage Max | 5.5V |
| Power Dissipation | 600W |
| Operating Temperature Max | 150°C |
| No. of Pins | 3Pins |
| Product Range | - |
| MSL | - |
| SVHC | No SVHC (17-Jan-2023) |
Product Overview
The IXFN24N100 is a HiPerFET™ N-channel enhancement-mode Power MOSFET features avalanche rated and fast intrinsic diode.
- International standard package
- miniBLOC with aluminium nitride isolation
- UL94V-0 Flammability rating
- Low RDS (ON) HDMOS™ process
- Rugged polysilicon gate cell structure
- Low package inductance
- Easy to mount
- Space savings
- High power density
Applications
Power Management, Industrial, Motor Drive & Control
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
| Channel Type | N Channel |
|---|---|
| Drain Source Voltage Vds | 1kV |
| Rds(on) Test Voltage | 10V |
| Transistor Mounting | Module |
| Power Dissipation | 600W |
| No. of Pins | 3Pins |
| MSL | - |
| Continuous Drain Current Id | 24A |
|---|---|
| Drain Source On State Resistance | 0.39ohm |
| Transistor Case Style | ISOTOP |
| Gate Source Threshold Voltage Max | 5.5V |
| Operating Temperature Max | 150°C |
| Product Range | - |
| SVHC | No SVHC (17-Jan-2023) |
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
| Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin: | United States Country in which last significant manufacturing process was carried out |
|---|---|
| Tariff No: | 85412900 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (17-Jan-2023) |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Weight (kg): | .04 |