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No Longer Manufactured
Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFN73N30
Order Code9359281
Technical Datasheet
Channel TypeN Channel
Continuous Drain Current Id73A
Drain Source Voltage Vds300V
Drain Source On State Resistance0.045ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation520W
Operating Temperature Max150°C
Product Range-
SVHCNo SVHC (17-Jan-2023)
Product Overview
The IXFN73N30 is a 300V N-channel Enhancement Mode Power MOSFET with fast intrinsic diode (HiPerFET™) and low RDS (on) HDMOS™ process. The IXYS most popular power MOSFET (HiPerFET™) is for both hard switching and resonant mode applications. This MOSFET offers low gate charge and excellent ruggedness with a fast intrinsic diode.
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- miniBLOC with aluminium nitride isolation
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS) rated
- Low inductance
- High power density
- Easy to mount
- Space-saving s
Applications
Power Management, Industrial, Lighting
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
300V
Rds(on) Test Voltage
10V
Power Dissipation
520W
Product Range
-
Continuous Drain Current Id
73A
Drain Source On State Resistance
0.045ohm
Gate Source Threshold Voltage Max
4V
Operating Temperature Max
150°C
SVHC
No SVHC (17-Jan-2023)
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.038102