Print Page
KP-2012F3C
Infrared Emitter, 940 nm, 120 °, 0805, 3 mW/Sr
Image is for illustrative purposes only. Please refer to product description.
3,495 total stock globally
Need more?
3495 Delivery in 3-5 Business Days(UK stock)
| Quantity | Price (Incl GST) |
|---|---|
| 5+ | $0.814 ($0.9361) |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$4.07 ($4.68 inc GST)
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Overview
The KP-2012F3C is an Infrared Emitting Diode with water clear lens, 0805 diode case and 120° viewing angle. It is made with gallium arsenide. Mechanically and spectrally matched to the phototransistor. It is suitable for use in infrared Illumination for cameras , machine vision systems, surveillance systems, industrial electronics, IR data transmission and remote control.
- 1.1mm Thickness
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Peak Wavelength
940nm
Radiant Intensity (Ie)
3mW/Sr
Forward Voltage VF Max
1.6V
Operating Temperature Max
85°C
Angle of Half Intensity
120°
Forward Current If(AV)
20mA
Operating Temperature Min
-40°C
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85414100
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.003266