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IXFN210N30X3
MOSFET Transistor, N Channel, 210 A, 300 V, 0.0038 ohm, 10 V, 4.5 V
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| Quantity | Price (Incl GST) |
|---|---|
| 1+ | $71.150 ($81.8225) |
| 5+ | $69.770 ($80.2355) |
| 10+ | $68.390 ($78.6485) |
| 50+ | $67.000 ($77.050) |
| 100+ | $65.920 ($75.808) |
Price for:Each
Minimum: 1
Multiple: 1
$71.15 ($81.82 inc GST)
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Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXFN210N30X3
Order Code3930190
Technical Datasheet
Channel TypeN Channel
Continuous Drain Current Id210A
Drain Source Voltage Vds300V
Drain Source On State Resistance0.0038ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4.5V
Power Dissipation695W
Operating Temperature Max150°C
Product Range-
Product Overview
N-channel enhancement mode avalanche rated fast X3-Class HiPerFET™ power MOSFET. It Is suitable for use in DC-DC converters, switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, AC and DC motor drives, robotics and servo controls applications.
- miniBLOC with aluminium nitride isolation
- Isolation voltage 2500V
- High current handling capability
- Easy to mount
- Space savings
- High power density
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
300V
Rds(on) Test Voltage
10V
Power Dissipation
695W
Product Range
-
Continuous Drain Current Id
210A
Drain Source On State Resistance
0.0038ohm
Gate Source Threshold Voltage Max
4.5V
Operating Temperature Max
150°C
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001