IXFN360N15T2
MOSFET Transistor, N Channel, 310 A, 150 V, 4000 µohm, 10 V, 5 V
| Manufacturer | LITTELFUSE |
|---|---|
| Manufacturer Part No | IXFN360N15T2Copy |
| Manufacturer Standard Lead Time | 25 weeks |
| Order Code | 4060231 |
| Product Range | GigaMOS TrenchT2 HiPERFET Series |
| Your Part Number | |
| Technical Datasheet |
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| Quantity | Price (Incl GST) |
|---|---|
| 1+ | $103.240 ($118.726) |
| 5+ | $94.860 ($109.089) |
| 10+ | $86.460 ($99.429) |
| 50+ | $83.730 ($96.2895) |
Product Information
| Manufacturer | LITTELFUSE |
|---|---|
| Manufacturer Part No | IXFN360N15T2Copy |
| Manufacturer Standard Lead Time | 25 weeks |
| Order Code | 4060231 |
| Product Range | GigaMOS TrenchT2 HiPERFET Series |
| Technical Datasheet | |
| Channel Type | N Channel |
| Continuous Drain Current Id | 310A |
| Drain Source Voltage Vds | 150V |
| Drain Source On State Resistance | 4000µohm |
| Rds(on) Test Voltage | 10V |
| Gate Source Threshold Voltage Max | 5V |
| Power Dissipation | 1070W |
| Operating Temperature Max | 175°C |
| Product Range | GigaMOS TrenchT2 HiPERFET Series |
Product Overview
IXFN360N15T2 is a DiscMSFT, GigaMOSTM TrenchT2, HiperFET™ power MOSFET. The device promotes device consolidation through the reduction or elimination of multiple paralleled lower current-rated MOSFET devices in high-power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon overall system simplicity, reliability, and cost. Applications include switch-mode and resonant-mode power supplies, DC-DC converters, battery chargers, synchronous rectification, uninterrupted power supplies, AC motor drives, DC choppers, and high-speed power switching applications.
- N-channel enhancement mode, avalanche rated, fast intrinsic diode
- Eliminates multiple paralleled lower current rated MOSFET devices
- Provides the ability to control more power within a smaller footprint
- Improves overall system reliability and cost
- Low RDS(ON) and gate charge (Qg), avalanches capabilities
- Incorporates Littelfuse HiPerFET™ technology for fast power switching performance
- International standard package, miniBLOC, with aluminium nitride isolation
- 150V drain source voltage and 5V gate source threshold voltage max
- 10V Rds(on) test voltage, 310A continuous drain current Id
- 2500V isolation voltage, 1070W power dissipation
Technical Specifications
| Channel Type | N Channel |
|---|---|
| Drain Source Voltage Vds | 150V |
| Rds(on) Test Voltage | 10V |
| Power Dissipation | 1070W |
| Product Range | GigaMOS TrenchT2 HiPERFET Series |
| Continuous Drain Current Id | 310A |
|---|---|
| Drain Source On State Resistance | 4000µohm |
| Gate Source Threshold Voltage Max | 5V |
| Operating Temperature Max | 175°C |
Technical Docs (2)
Legislation and Environmental
| Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin: | South Korea Country in which last significant manufacturing process was carried out |
|---|---|
| Tariff No: | 85412900 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Weight (kg): | .040823 |