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2N6109
Bipolar (BJT) Single Transistor, General Purpose, PNP, 50 V, 2 A, 800 mW, TO-220AB, Through Hole
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No Longer Manufactured
Product Information
ManufacturerMAGNATEC
Manufacturer Part No2N6109
Order Code1208629
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max50V
Continuous Collector Current2A
Power Dissipation800mW
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency-
DC Current Gain hFE Min30hFE
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for 2N6109
1 Product Found
Product Overview
The 2N6109 is a general-purpose PNP Bipolar Transistor intended for a wide variety of medium-power switching and amplifier applications, such as series and shunt regulators and driver and output stages of high-fidelity amplifiers.
- Low saturation voltage
- Maximum safe-area-of-operation curves specified for DC operation
- -65 to 150°C Junction temperature range
Applications
Power Management, Industrial
Technical Specifications
Transistor Polarity
PNP
Continuous Collector Current
2A
Transistor Case Style
TO-220AB
No. of Pins
3Pins
DC Current Gain hFE Min
30hFE
Product Range
-
Collector Emitter Voltage Max
50V
Power Dissipation
800mW
Transistor Mounting
Through Hole
Transition Frequency
-
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Associated Products
4 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Great Britain
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Great Britain
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002