Print Page
MSC045SMB120B4N
Silicon Carbide MOSFET, Single, N Channel, 49 A, 1.2 kV, 0.06 ohm, TO-247
Image is for illustrative purposes only. Please refer to product description.
ManufacturerMICROCHIP
Manufacturer Part NoMSC045SMB120B4N
Order Code4751107
Product RangemSiC Series
Technical Datasheet
120 total stock globally
Need more?
120 Delivery in 3-5 Business Days(UK stock)
| Quantity | Price (Incl GST) |
|---|---|
| 1+ | $15.890 ($18.2735) |
| 25+ | $13.090 ($15.0535) |
| 100+ | $13.030 ($14.9845) |
Price for:Each
Minimum: 1
Multiple: 1
$15.89 ($18.27 inc GST)
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerMICROCHIP
Manufacturer Part NoMSC045SMB120B4N
Order Code4751107
Product RangemSiC Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id49A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.06ohm
Transistor Case StyleTO-247
No. of Pins4Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max5V
Power Dissipation237W
Operating Temperature Max175°C
Product RangemSiC Series
SVHCNo SVHC (25-Jun-2025)
Product Overview
MSC045SMB120B4N is a 1200V, 45mohm silicon carbide (SiC) power MOSFET in a 4-lead TO-247 package. It delivers high efficiency with low switching and conduction losses, fast switching speed, and robust avalanche performance. Designed for high-power and high-temperature applications, it is ideal for use in EV chargers, solar inverters, motor drives, and industrial power supplies.
- Low on-resistance RDS(on) reduces conduction losses, improving efficiency and thermal performance
- Supports high-frequency operation for smaller magnetics, higher power density, and lower cost
- Superior avalanche ruggedness and short-circuit withstand time
- HV-H3TRB proven capability ensures long-term reliability in high humidity environments
- Lower VGS and standard package enables improved compatibility with standard gate drivers
- Increased creepage distance (notch) improves safety and reliability in high-voltage designs
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
49A
Drain Source On State Resistance
0.06ohm
No. of Pins
4Pins
Gate Source Threshold Voltage Max
5V
Operating Temperature Max
175°C
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-247
Rds(on) Test Voltage
18V
Power Dissipation
237W
Product Range
mSiC Series
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001