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Quantity | Price (Incl GST) |
---|---|
1+ | $3.100 ($3.565) |
10+ | $2.480 ($2.852) |
100+ | $1.770 ($2.0355) |
500+ | $1.240 ($1.426) |
1000+ | $0.884 ($1.0166) |
5000+ | $0.773 ($0.889) |
Product Information
Product Overview
The 2N6052 is a high-performance PNP silicon Darlington power transistor, engineered for applications requiring high current handling, high voltage tolerance, and extremely high current gain. Encapsulated in a rugged TO-3 metal can package, this transistor is built to deliver reliable performance under demanding thermal and electrical conditions. With a collector current rating up to 10A, collector-emitter voltage up to –100V, and DC current gain exceeding 1000, the 2N6052 is ideal for power switching, motor control, and high-side load driving in both consumer and industrial electronics. The integrated Darlington pair offers high gain with minimal base current, making it particularly effective in low-drive control systems and buffer stages.
- PNP Darlington bipolar power transistor
- Collector-emitter voltage (VCEO): –100V
- Collector current (IC): up to 10A
- DC current gain (hFE): <gt/>1000
- TO-3 metal package for superior heat dissipation
- Low base drive requirements
- Designed for linear and switching applications
Applications
Audio, Signal Processing, LED Lighting, Motor Drive & Control, Power Management, DC/DC Converters, Temperature, Industrial Automation
Technical Specifications
PNP
150W
TO-3
750hFE
200°C
AEC-Q101
100V
12A
3Pins
Through Hole
Multicomp Pro Darlington PNP Transistors
No SVHC (25-Jun-2025)
Technical Docs (1)
Alternatives for 2N6052.
1 Product Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:India
Country in which last significant manufacturing process was carried out
Product Compliance Certificate