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BSS84AKS,115
Dual MOSFET, P Channel, 50 V, 160 mA
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| Quantity | Price (Incl GST) |
|---|---|
| 500+ | $0.130 ($0.1495) |
| 1500+ | $0.127 ($0.1461) |
Price for:Each (Supplied on Cut Tape)
Minimum: 500
Multiple: 5
$65.00 ($74.75 inc GST)
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoBSS84AKS,115
Order Code1972665RL
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds N Channel-
Drain Source Voltage Vds50V
Continuous Drain Current Id160mA
Drain Source Voltage Vds P Channel50V
On Resistance Rds(on)4.5ohm
Continuous Drain Current Id N Channel-
Continuous Drain Current Id P Channel160mA
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel-
Drain Source On State Resistance P Channel4.5ohm
Rds(on) Test Voltage10V
Transistor Case StyleSOT-363
Gate Source Threshold Voltage Max1.6V
No. of Pins6Pins
Power Dissipation Pd445mW
Power Dissipation N Channel-
Power Dissipation P Channel445mW
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The BSS84AKS is a dual P-channel enhancement-mode FET in a very small surface-mount plastic package using Trench MOSFET technology. It is suitable for relay driver, high-speed line driver, low-side load-switch and switching circuit applications.
- Logic-level compatible
- Very fast switching
Applications
Industrial, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds N Channel
-
Continuous Drain Current Id
160mA
On Resistance Rds(on)
4.5ohm
Continuous Drain Current Id P Channel
160mA
Drain Source On State Resistance N Channel
-
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.6V
Power Dissipation Pd
445mW
Power Dissipation P Channel
445mW
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (21-Jan-2025)
Channel Type
P Channel
Drain Source Voltage Vds
50V
Drain Source Voltage Vds P Channel
50V
Continuous Drain Current Id N Channel
-
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
4.5ohm
Transistor Case Style
SOT-363
No. of Pins
6Pins
Power Dissipation N Channel
-
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000005