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BUK7K6R2-40EX
Dual MOSFET, N Channel, 40 V, 40 V, 40 A, 40 A, 0.0058 ohm
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ManufacturerNEXPERIA
Manufacturer Part NoBUK7K6R2-40EX
Order Code3439669RL
Your Part Number
Technical Datasheet
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| Quantity | Price (Incl GST) |
|---|---|
| 100+ | $2.360 ($2.714) |
| 500+ | $1.860 ($2.139) |
| 1000+ | $1.690 ($1.9435) |
| 5000+ | $1.680 ($1.932) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
$236.00 ($271.40 inc GST)
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoBUK7K6R2-40EX
Order Code3439669RL
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds N Channel40V
Drain Source Voltage Vds40V
Drain Source Voltage Vds P Channel40V
Continuous Drain Current Id40A
On Resistance Rds(on)0.0048ohm
Continuous Drain Current Id N Channel40A
Continuous Drain Current Id P Channel40A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.0058ohm
Drain Source On State Resistance P Channel-
Rds(on) Test Voltage10V
Transistor Case StyleLFPAK56D
Gate Source Threshold Voltage Max3V
Power Dissipation Pd68W
No. of Pins8Pins
Power Dissipation N Channel68W
Power Dissipation P Channel68W
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCLead (25-Jun-2025)
Product Overview
BUK7K6R2-40EX is a dual standard level N-channel MOSFET in a LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to the AEC Q101 standard for use in high-performance automotive applications. Typical applications include 12V automotive systems, motors, lamps and solenoid control, transmission control, ultra-high performance power switching.
- Repetitive avalanche rated
- Suitable for thermally demanding environments due to 175°C rating
- True standard level gate with VGS(th) of greater than 1V at 175°C
- Drain-source breakdown voltage is 36V min at ID = 250µA; VGS = 0V; Tj V(BR)DSS drain-source = -55°C
- Drain leakage current is 0.02µA typ at VDS = 40V; VGS = 0V; Tj = 25°C
- Gate-source threshold voltage is 3V typ at ID = 1mA; VDS = VGS; Tj = 25°C
- Drain-source on-state resistance is 4.8mohm typ at VGS = 10V; ID = 20A; Tj = 25°C
- Total gate charge is 32.3nC typ at ID = 20A; VDS = 32V; VGS = 10V; Tj = 25°C
- Source-drain voltage is 0.78V typ at IS = 15A; VGS = 0V; Tj = 25°C
- Reverse recovery time is 25ns typ at IS = 5A; dIS/dt = -100A/µs; VGS = 0V; VDS = 20V; Tj = 25°C
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds N Channel
40V
Drain Source Voltage Vds P Channel
40V
On Resistance Rds(on)
0.0048ohm
Continuous Drain Current Id P Channel
40A
Drain Source On State Resistance N Channel
0.0058ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Power Dissipation P Channel
68W
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
Lead (25-Jun-2025)
Transistor Polarity
N Channel
Drain Source Voltage Vds
40V
Continuous Drain Current Id
40A
Continuous Drain Current Id N Channel
40A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
-
Transistor Case Style
LFPAK56D
Power Dissipation Pd
68W
Power Dissipation N Channel
68W
Operating Temperature Max
175°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001361