Print Page
NGB30T65M3DFPJ
IGBT, 56 A, 1.52 V, 199 W, 650 V, TO-263AB (D2PAK), 3 Pins
Image is for illustrative purposes only. Please refer to product description.
ManufacturerNEXPERIA
Manufacturer Part NoNGB30T65M3DFPJCopy
Manufacturer Standard Lead Time10 weeks
Order Code
Re-Reel4745452RL
Cut Tape4745452
Your Part Number
800 total stock globally
Need more?
800 Delivery in 3-5 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $2.630 | $2.63 |
Cut Tape & Re-Reel
| Quantity | Price (Incl GST) |
|---|---|
| 1+ | $2.630 ($3.0245) |
| 10+ | $1.730 ($1.9895) |
| 100+ | $1.440 ($1.656) |
| 500+ | $1.420 ($1.633) |
| 1000+ | $1.380 ($1.587) |
| 5000+ | $1.340 ($1.541) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoNGB30T65M3DFPJCopy
Manufacturer Standard Lead Time10 weeks
Order Code
Re-Reel4745452RL
Cut Tape4745452
Technical Datasheet
Continuous Collector Current56A
Collector Emitter Saturation Voltage1.52V
Power Dissipation199W
Collector Emitter Voltage Max650V
Transistor Case StyleTO-263AB (D2PAK)
No. of Pins3Pins
Operating Temperature Max175°C
Transistor MountingSurface Mount
Product Range-
SVHCLead (25-Jun-2025)
Product Overview
NGB30T65M3DFPJ is a 650V, 30A trench field-stop IGBT with full rated silicon diode in a 3 pin D2PAK package. It is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGB30T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short circuit withstand time of 5μs. This hard-switching 650V, 30A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications and servo motor drive applications.
- Low conduction and switching losses
- Stable and tight parameters for easy parallel operation
- Fully rated and fast reverse recovery diode
Technical Specifications
Continuous Collector Current
56A
Power Dissipation
199W
Transistor Case Style
TO-263AB (D2PAK)
Operating Temperature Max
175°C
Product Range
-
Collector Emitter Saturation Voltage
1.52V
Collector Emitter Voltage Max
650V
No. of Pins
3Pins
Transistor Mounting
Surface Mount
SVHC
Lead (25-Jun-2025)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001