Print Page
PSMN1R2-25YLC,115
Power MOSFET, N Channel, 25 V, 100 A, 1050 µohm, SOT-669, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerNEXPERIA
Manufacturer Part NoPSMN1R2-25YLC,115Copy
Manufacturer Standard Lead Time14 weeks
Order Code
Re-Reel1895402RL
Cut Tape1895402
Your Part Number
Available to Order
Notify me when back in stock
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $3.030 | $3.03 |
Cut Tape & Re-Reel
| Quantity | Price (Incl GST) |
|---|---|
| 1+ | $3.030 ($3.4845) |
| 10+ | $1.940 ($2.231) |
| 100+ | $1.290 ($1.4835) |
| 500+ | $0.999 ($1.1488) |
| 1000+ | $0.868 ($0.9982) |
| 5000+ | $0.818 ($0.9407) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPSMN1R2-25YLC,115Copy
Manufacturer Standard Lead Time14 weeks
Order Code
Re-Reel1895402RL
Cut Tape1895402
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds25V
Continuous Drain Current Id100A
Drain Source On State Resistance1050µohm
Transistor Case StyleSOT-669
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.45V
Power Dissipation179W
No. of Pins4Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
Product Overview
The PSMN1R2-25YLC is a N-channel enhancement-mode logic level MOSFET optimised for 4.5V gate drive utilising NextPower Superjunction technology. It is designed and qualified for use in a wide range of DC-to-DC converters, lithium-ion battery protection, load switching, power O-ring, server power supplies, sync rectifier and domestic equipment applications.
- Ultra-low QG, QGD and QOSS for high system efficiencies at low and high loads
- Ultra-low RDS (ON) and low parasitic inductance
- -55 to 175°C Junction temperature range
Applications
Power Management, Communications & Networking, Consumer Electronics, Industrial
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
100A
Transistor Case Style
SOT-669
Rds(on) Test Voltage
10V
Power Dissipation
179W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
25V
Drain Source On State Resistance
1050µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.45V
No. of Pins
4Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Alternatives for PSMN1R2-25YLC,115
8 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0008