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BFG520,215
Bipolar - RF Transistor, NPN, 15 V, 9 GHz, 300 mW, 70 mA, SOT-143B
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Product Information
ManufacturerNXP
Manufacturer Part NoBFG520,215
Order Code1081289RL
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max15V
Power Dissipation300mW
Continuous Collector Current70mA
Transistor Case StyleSOT-143B
No. of Pins4Pins
DC Current Gain hFE Min120hFE
Transistor MountingSurface Mount
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The BFG520 is a NPN silicon epitaxial planar Wideband Transistor encapsulated in a plastic envelope. The device is intended for applications in the RF frontend in the GHz range, such as analogue and digital cellular telephones, cordless telephones (CT1, CT2, DECT), radar detectors, pagers and satellite TV tuners (SATV) and repeater amplifiers in fibre-optic systems.
- High power gain
- Low noise figure
- High transition frequency
- Gold metallization ensures excellent reliability
Applications
Industrial, RF Communications, Communications & Networking, Fibre Optics, Power Management
Technical Specifications
Transistor Polarity
NPN
Power Dissipation
300mW
Transistor Case Style
SOT-143B
DC Current Gain hFE Min
120hFE
Operating Temperature Max
150°C
Qualification
-
Collector Emitter Voltage Max
15V
Continuous Collector Current
70mA
No. of Pins
4Pins
Transistor Mounting
Surface Mount
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Netherlands
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Netherlands
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000009