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BFG591
Bipolar - RF Transistor, NPN, 15 V, 7 GHz, 2 W, 200 mA, SOT-223
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Product Information
ManufacturerNXP
Manufacturer Part NoBFG591
Order Code1081291RL
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max15V
Power Dissipation2W
Continuous Collector Current200mA
Transistor Case StyleSOT-223
No. of Pins3Pins
DC Current Gain hFE Min90hFE
Transistor MountingSurface Mount
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The BFG591 is a NPN silicon planar epitaxial Wideband Transistor features high power gain and low noise figure. Intended for applications in the GHz range such as MATV or CATV amplifiers.
- High transition frequency
- Gold metallization ensures excellent reliability
Applications
RF Communications
Technical Specifications
Transistor Polarity
NPN
Power Dissipation
2W
Transistor Case Style
SOT-223
DC Current Gain hFE Min
90hFE
Operating Temperature Max
150°C
Qualification
-
Collector Emitter Voltage Max
15V
Continuous Collector Current
200mA
No. of Pins
3Pins
Transistor Mounting
Surface Mount
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Netherlands
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Netherlands
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000264