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Product Information
ManufacturerNXP
Manufacturer Part NoBFQ19
Order Code1081292
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max15V
Power Dissipation1W
Continuous Collector Current100mA
Transistor Case StyleSOT-89
No. of Pins3Pins
DC Current Gain hFE Min80hFE
Transistor MountingSurface Mount
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The BFQ19 is a 5GHz NPN Wideband Transistor designed for use in UHF and microwave amplifiers such as in aerial amplifiers, radar systems, oscilloscopes and spectrum analysers. The transistor features very low intermodulation distortion and high power gain. Due to its very high transition frequency, it also has excellent wideband properties and low noise up to high frequencies.
- 175°C Junction temperature
Applications
RF Communications
Technical Specifications
Transistor Polarity
NPN
Power Dissipation
1W
Transistor Case Style
SOT-89
DC Current Gain hFE Min
80hFE
Operating Temperature Max
150°C
Qualification
-
Collector Emitter Voltage Max
15V
Continuous Collector Current
100mA
No. of Pins
3Pins
Transistor Mounting
Surface Mount
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Netherlands
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Netherlands
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001