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Product Information
ManufacturerNXP
Manufacturer Part NoBFR520
Order Code1081294
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max15V
Power Dissipation300mW
Continuous Collector Current70mA
Transistor Case StyleSOT-23
No. of Pins3Pins
DC Current Gain hFE Min120hFE
Transistor MountingSurface Mount
Operating Temperature Max175°C
Product Range-
Qualification-
Product Overview
The BFR520 is a NPN silicon epitaxial planar Wideband Transistor encapsulated in a plastic package. The device is intended for RF front end wideband applications in the GHz range, such as analogue and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT), radar detectors, pagers, satellite television tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optic systems.
- High power gain
- Low noise figure
- High transition frequency
- Gold metallization ensures excellent reliability
Applications
Industrial, RF Communications, Communications & Networking, Fibre Optics, Power Management
Technical Specifications
Transistor Polarity
NPN
Power Dissipation
300mW
Transistor Case Style
SOT-23
DC Current Gain hFE Min
120hFE
Operating Temperature Max
175°C
Qualification
-
Collector Emitter Voltage Max
15V
Continuous Collector Current
70mA
No. of Pins
3Pins
Transistor Mounting
Surface Mount
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Netherlands
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Netherlands
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000033