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BLT81,115
Bipolar - RF Transistor, NPN, 9.5 V, 900 MHz, 2 W, 500 mA, SOT-223
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Product Information
ManufacturerNXP
Manufacturer Part NoBLT81,115
Order Code1212471
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max9.5V
Power Dissipation2W
Continuous Collector Current500mA
Transistor Case StyleSOT-223
No. of Pins3Pins
DC Current Gain hFE Min25hFE
Transistor MountingSurface Mount
Operating Temperature Max175°C
Product Range-
Qualification-
Product Overview
The BLT81,115 is a 9.5V NPN Silicon Planar Epitaxial UHF Power Transistor in SMD encapsulation. Suitable for use in hand held radio equipment in 900MHz communication band.
- Gold metallization ensures excellent reliability
- 175°C Junction temperature
Applications
RF Communications, Portable Devices
Technical Specifications
Transistor Polarity
NPN
Power Dissipation
2W
Transistor Case Style
SOT-223
DC Current Gain hFE Min
25hFE
Operating Temperature Max
175°C
Qualification
-
Collector Emitter Voltage Max
9.5V
Continuous Collector Current
500mA
No. of Pins
3Pins
Transistor Mounting
Surface Mount
Product Range
-
Associated Products
4 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00012