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2N3906TFR
Bipolar (BJT) Single Transistor, PNP, 40 V, 200 mA, 625 mW, TO-92, Through Hole
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| Quantity | Price (Incl GST) |
|---|---|
| 5+ | $0.276 ($0.3174) |
| 10+ | $0.164 ($0.1886) |
| 100+ | $0.140 ($0.161) |
| 500+ | $0.121 ($0.1392) |
| 1000+ | $0.093 ($0.107) |
| 5000+ | $0.064 ($0.0736) |
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Product Information
ManufacturerONSEMI
Manufacturer Part No2N3906TFR
Order Code2453314
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max40V
Continuous Collector Current200mA
Power Dissipation625mW
Transistor Case StyleTO-92
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency250MHz
DC Current Gain hFE Min30hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The 2N3906TFR is a PNP Bipolar Transistor designed for general-purpose amplifier and switching applications at collector currents of 10 to 100mA.
- -55 to 150°C Operating junction temperature range
Applications
Power Management, Industrial
Technical Specifications
Transistor Polarity
PNP
Continuous Collector Current
200mA
Transistor Case Style
TO-92
No. of Pins
3Pins
DC Current Gain hFE Min
30hFE
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
40V
Power Dissipation
625mW
Transistor Mounting
Through Hole
Transition Frequency
250MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (3)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00024