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BD439G
Bipolar (BJT) Single Transistor, NPN, 60 V, 4 A, 36 W, TO-225, Through Hole
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| Quantity | Price (Incl GST) |
|---|---|
| 1+ | $2.180 ($2.507) |
| 10+ | $1.470 ($1.6905) |
| 100+ | $1.020 ($1.173) |
| 500+ | $0.821 ($0.9442) |
| 1000+ | $0.688 ($0.7912) |
| 5000+ | $0.680 ($0.782) |
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Multiple: 1
$2.18 ($2.51 inc GST)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoBD439G
Order Code2845299
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max60V
Continuous Collector Current4A
Power Dissipation36W
Transistor Case StyleTO-225
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency3MHz
DC Current Gain hFE Min20hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (27-Jun-2024)
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
4A
Transistor Case Style
TO-225
No. of Pins
3Pins
DC Current Gain hFE Min
20hFE
Product Range
-
MSL
-
Collector Emitter Voltage Max
60V
Power Dissipation
36W
Transistor Mounting
Through Hole
Transition Frequency
3MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001