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Product Information
ManufacturerONSEMI
Manufacturer Part NoBSS63LT1G
Order Code2317592
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max100V
Continuous Collector Current100mA
Power Dissipation225mW
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
No. of Pins3Pins
Transition Frequency95MHz
DC Current Gain hFE Min30hFE
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The BSS63LT1G is a PNP high voltage Bipolar Transistor designed for general purpose switching applications. The device is housed in the package which is designed for lower power surface-mount applications. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die.
- Can be soldered using wave or reflow
- PNP complement is BSP62T1
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
PNP
Continuous Collector Current
100mA
Transistor Case Style
SOT-23
No. of Pins
3Pins
DC Current Gain hFE Min
30hFE
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
100V
Power Dissipation
225mW
Transistor Mounting
Surface Mount
Transition Frequency
95MHz
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
Alternatives for BSS63LT1G
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000132