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FDC6303N
Dual MOSFET, N Channel, 25 V, 680 mA, 0.45 ohm
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| Quantity | Price (Incl GST) |
|---|---|
| 100+ | $0.472 ($0.5428) |
| 500+ | $0.386 ($0.4439) |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDC6303N
Order Code1467964RL
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds N Channel25V
Drain Source Voltage Vds25V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id680mA
On Resistance Rds(on)0.45ohm
Continuous Drain Current Id N Channel680mA
Continuous Drain Current Id P Channel-
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.45ohm
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel-
Transistor Case StyleSuperSOT
Gate Source Threshold Voltage Max800mV
No. of Pins6Pins
Power Dissipation Pd900mW
Power Dissipation N Channel900mW
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDC6303N is a dual N-channel logic level enhancement-mode FET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required this one N-channel FET can replace several digital transistors with different bias resistors like the IMHxA series.
- Very low level gate drive requirements allowing direct operation in 3V circuits
- Gate-source Zener for ESD ruggedness
- Replace multiple NPN digital transistors (IMHxA series) with one DMOS FET
- 8V Gate-source voltage
- 0.68A Continuous drain/output current
- 2A Pulsed drain/output current
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds N Channel
25V
Drain Source Voltage Vds P Channel
-
On Resistance Rds(on)
0.45ohm
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance N Channel
0.45ohm
Drain Source On State Resistance P Channel
-
Gate Source Threshold Voltage Max
800mV
Power Dissipation Pd
900mW
Power Dissipation P Channel
-
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Transistor Polarity
N Channel
Drain Source Voltage Vds
25V
Continuous Drain Current Id
680mA
Continuous Drain Current Id N Channel
680mA
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Transistor Case Style
SuperSOT
No. of Pins
6Pins
Power Dissipation N Channel
900mW
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00004