FDC6310P
Dual MOSFET, P Channel, 20 V, 20 V, 2.2 A, 2.2 A, 0.1 ohm
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| Quantity | Price (Incl GST) |
|---|---|
| 100+ | $0.517 ($0.5946) |
| 500+ | $0.459 ($0.5279) |
| 1000+ | $0.434 ($0.4991) |
| 5000+ | $0.397 ($0.4566) |
Product Information
Product Overview
The FDC6310P is a dual P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain low gate charge for superior switching performance. This device has been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive packages are impractical. It is suitable for use with load switch and battery protected applications.
- Low gate charge
- Fast switching speed
- High performance Trench technology for extremely low RDS (ON)
- Small footprint
- Low profile
Applications
Industrial, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
P Channel
20V
2.2A
0.1ohm
2.2A
0.1ohm
0.1ohm
1V
960mW
960mW
-
-
No SVHC (27-Jun-2024)
P Channel
20V
20V
2.2A
Surface Mount
4.5V
SOT-23
6Pins
960mW
150°C
-
MSL 1 - Unlimited
Technical Docs (3)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate