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FDC6312P
Dual MOSFET, P Channel, 20 V, 2.3 A
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| Quantity | Price (Incl GST) |
|---|---|
| 100+ | $0.632 ($0.7268) |
| 500+ | $0.498 ($0.5727) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
$63.20 ($72.68 inc GST)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDC6312P
Order Code1700713RL
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds20V
Drain Source Voltage Vds N Channel-
Continuous Drain Current Id2.3A
Drain Source Voltage Vds P Channel20V
On Resistance Rds(on)0.115ohm
Continuous Drain Current Id N Channel-
Continuous Drain Current Id P Channel2.3A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel-
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel0.115ohm
Transistor Case StyleSuperSOT
Gate Source Threshold Voltage Max900mV
No. of Pins6Pins
Power Dissipation Pd960mW
Power Dissipation N Channel-
Power Dissipation P Channel960mW
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDC6312P is a dual P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain low gate charge for superior switching performance.
- High performance Trench technology for extremely low RDS (ON)
- Small footprint
- Low profile
- ±8V Gate to source voltage
- -2.3A Continuous drain/output current
- 7A Pulsed drain/output current
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
20V
Continuous Drain Current Id
2.3A
On Resistance Rds(on)
0.115ohm
Continuous Drain Current Id P Channel
2.3A
Drain Source On State Resistance N Channel
-
Drain Source On State Resistance P Channel
0.115ohm
Gate Source Threshold Voltage Max
900mV
Power Dissipation Pd
960mW
Power Dissipation P Channel
960mW
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Channel Type
P Channel
Drain Source Voltage Vds N Channel
-
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
-
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Transistor Case Style
SuperSOT
No. of Pins
6Pins
Power Dissipation N Channel
-
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Alternatives for FDC6312P
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000145