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FDC6401N
Dual MOSFET, N Channel, 20 V, 3 A, 0.07 ohm
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| Quantity | Price (Incl GST) |
|---|---|
| 100+ | $0.670 ($0.7705) |
| 500+ | $0.558 ($0.6417) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
$67.00 ($77.05 inc GST)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDC6401N
Order Code1467966RL
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds20V
Drain Source Voltage Vds N Channel20V
Continuous Drain Current Id3A
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel3A
On Resistance Rds(on)0.07ohm
Continuous Drain Current Id P Channel-
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.07ohm
Drain Source On State Resistance P Channel-
Rds(on) Test Voltage4.5V
Transistor Case StyleSuperSOT
Gate Source Threshold Voltage Max900mV
No. of Pins6Pins
Power Dissipation Pd960mW
Power Dissipation N Channel960mW
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDC6401N is a dual N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS (ON) and fast switching speed. The device is suitable for use with DC-to-DC converters and battery protected applications.
- Low gate charge
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability
- ±12V Gate to source voltage
- 3A Continuous drain/output current
- 12A Pulsed drain/output current
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
20V
Continuous Drain Current Id
3A
Continuous Drain Current Id N Channel
3A
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance N Channel
0.07ohm
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
900mV
Power Dissipation Pd
960mW
Power Dissipation P Channel
-
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds P Channel
-
On Resistance Rds(on)
0.07ohm
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
-
Transistor Case Style
SuperSOT
No. of Pins
6Pins
Power Dissipation N Channel
960mW
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Alternatives for FDC6401N
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000363