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FDG330P...
Power MOSFET, P Channel, 12 V, 2 A, 0.084 ohm, SC-70, Surface Mount
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDG330P...
Order Code1495187
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds12V
Continuous Drain Current Id2A
Drain Source On State Resistance0.084ohm
Transistor Case StyleSC-70
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation750mW
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The FDG330P is a 1.8V specified P-channel MOSFET produced using Fairchild's advanced low voltage PowerTrench® process. It has been optimized for battery power management and load switch applications.
- Low gate charge
- High performance Trench technology for extremely low RDS (ON)
- Compact industry standard surface-mount package
Applications
Power Management, Industrial
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
2A
Transistor Case Style
SC-70
Rds(on) Test Voltage
4.5V
No. of Pins
6Pins
Product Range
-
Drain Source Voltage Vds
12V
Drain Source On State Resistance
0.084ohm
Transistor Mounting
Surface Mount
Power Dissipation
750mW
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000033