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FDS3890
Dual MOSFET, N Channel, 80 V, 80 V, 4.7 A, 4.7 A, 0.034 ohm
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| Quantity | Price (Incl GST) |
|---|---|
| 1+ | $4.220 ($4.853) |
| 10+ | $2.760 ($3.174) |
| 100+ | $1.980 ($2.277) |
| 500+ | $1.580 ($1.817) |
| 1000+ | $1.460 ($1.679) |
| 5000+ | $1.410 ($1.6215) |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDS3890
Order Code2101472
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel80V
Drain Source Voltage Vds P Channel80V
Continuous Drain Current Id N Channel4.7A
Continuous Drain Current Id P Channel4.7A
Drain Source On State Resistance N Channel0.034ohm
Drain Source On State Resistance P Channel0.034ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max175°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDS3890 is a PowerTrench® dual N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. This MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS (ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies) and DC-to-DC power supply designs with higher overall efficiency.
- Fast switching speed
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability
- ±20V Gate to source voltage
- 4.7A Continuous drain current
- 20A Pulsed drain current
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
80V
Continuous Drain Current Id P Channel
4.7A
Drain Source On State Resistance P Channel
0.034ohm
No. of Pins
8Pins
Power Dissipation P Channel
2W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
80V
Continuous Drain Current Id N Channel
4.7A
Drain Source On State Resistance N Channel
0.034ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00001