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FDS4935A
Dual MOSFET, P Channel, 30 V, 7 A
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| Quantity | Price (Incl GST) |
|---|---|
| 100+ | $1.630 ($1.8745) |
| 500+ | $1.300 ($1.495) |
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Minimum: 100
Multiple: 5
$163.00 ($187.45 inc GST)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDS4935A
Order Code1467981RL
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel-
Continuous Drain Current Id7A
Drain Source Voltage Vds P Channel30V
On Resistance Rds(on)0.023ohm
Continuous Drain Current Id N Channel-
Continuous Drain Current Id P Channel7A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel-
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.023ohm
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max1.6V
No. of Pins8Pins
Power Dissipation Pd1.6W
Power Dissipation N Channel-
Power Dissipation P Channel2W
Operating Temperature Max175°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDS4935A is a dual P-channel PowerTrench® MOSFET rugged gate version of advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V to 20V). It is suitable for load-switch and battery protection applications.
- Fast switching speed
- Low gate charge
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability
- ±20V Gate to source voltage
- -7A Continuous drain current
- -30A Pulsed drain current
Applications
Industrial, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
7A
On Resistance Rds(on)
0.023ohm
Continuous Drain Current Id P Channel
7A
Drain Source On State Resistance N Channel
-
Drain Source On State Resistance P Channel
0.023ohm
Gate Source Threshold Voltage Max
1.6V
Power Dissipation Pd
1.6W
Power Dissipation P Channel
2W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Channel Type
P Channel
Drain Source Voltage Vds N Channel
-
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
-
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation N Channel
-
Operating Temperature Max
175°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Alternatives for FDS4935A
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000335