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Quantity | Price (Incl GST) |
---|---|
2500+ | $1.660 ($1.909) |
7500+ | $1.620 ($1.863) |
Product Information
Product Overview
The FDS5670 is a N-channel MOSFET produced using PowerTrench® process. It designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It feature faster switching and lower gate charge than other MOSFETs with comparable RDS (ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies) and DC-to-DC power supply designs with higher overall efficiency.
- Low gate charge
- Fast switching speed
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
N Channel
10A
SOIC
10V
2.5W
150°C
-
No SVHC (27-Jun-2024)
60V
0.014ohm
Surface Mount
2.4V
8Pins
-
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate