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FDS6898A
Dual MOSFET, N Channel, 20 V, 20 V, 9.4 A, 9.4 A, 0.01 ohm
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 16 week(s)
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| Quantity | Price (Incl GST) |
|---|---|
| 2500+ | $1.100 ($1.265) |
| 7500+ | $0.960 ($1.104) |
| 20000+ | $0.796 ($0.9154) |
| 37500+ | $0.716 ($0.8234) |
Price for:Each (Supplied on Full Reel)
Minimum: 2500
Multiple: 2500
$2,750.00 ($3,162.50 inc GST)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDS6898A
Order Code2251969
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel9.4A
Continuous Drain Current Id P Channel9.4A
Drain Source On State Resistance N Channel0.01ohm
Drain Source On State Resistance P Channel0.01ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDS6898A is a dual N-channel logic level PWM optimized MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance. This device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
- Low gate charge
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability
Applications
Industrial, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id P Channel
9.4A
Drain Source On State Resistance P Channel
0.01ohm
No. of Pins
8Pins
Power Dissipation P Channel
2W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id N Channel
9.4A
Drain Source On State Resistance N Channel
0.01ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
Alternatives for FDS6898A
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000228