FDS8858CZ
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 8.6 A, 8.6 A, 0.017 ohm
7,500 more incoming. You can reserve stock now
| Quantity | Price (Incl GST) |
|---|---|
| 5+ | $2.530 ($2.9095) |
| 10+ | $1.610 ($1.8515) |
| 100+ | $1.090 ($1.2535) |
| 500+ | $0.863 ($0.9924) |
Product Information
Product Overview
The FDS8858CZ is a 30V Dual N-channel and P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The medium voltage power MOSFET is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (figure of merit (QGxRDS(ON))) of these devices is 66% lower than that of previous generation. Soft body diode performance of new PowerTrench® MOSFET is able to eliminate snubber circuit or replace higher voltage rating - MOSFET need circuit because it can minimize the undesirable voltage spikes in synchronous rectification. This product is general usage and suitable for many different applications.
- High performance trench technology for extremely low RDS (on)
- High power and current handling capability
Technical Specifications
Complementary N and P Channel
30V
8.6A
0.017ohm
8Pins
2W
-
-
30V
8.6A
0.017ohm
SOIC
2W
150°C
-
No SVHC (27-Jun-2024)
Technical Docs (2)
Alternatives for FDS8858CZ
2 Products Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate