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HGT1S10N120BNST

IGBT, 35 A, 2.45 V, 298 W, 1.2 kV, TO-263AB, 3 Pins

ONSEMI HGT1S10N120BNST
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Manufacturer:
ONSEMI ONSEMI
Manufacturer Part No:
HGT1S10N120BNST
Order Code:
2454176RL
Technical Datasheet:
HGT1S10N120BNST   Datasheet
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Product Overview

The HGT1S10N120BNST is a N-channel Non-punch Through (NPT) IGBT ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS and solar inverter. It is new member of the MOS gated high voltage switching IGBT family. It combines the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low ON-state conduction loss of a bipolar transistor.
  • Short-circuit rating
  • Avalanche rated
  • 2.45V @ IC = 10A Low saturation voltage
  • 140ns Fall time @ TJ = 150°C
  • 298W Total power dissipation @ TC = 25°C

Applications

Power Management, Motor Drive & Control

Warnings

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

Product Information

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35A

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2.45V

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298W

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1.2kV

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TO-263AB

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3Pins

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150°C

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-

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-

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MSL 1 - Unlimited
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Technical Docs (3)

CAD Downloads

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Terms and Conditions

CAD Models - Notice
CAD Models and drawings are provided to you on a revocable limited licence for your internal use only but remain the property of the manufacturer who retain all intellectual property rights and ownership. They are provided to assist you in decision making and as design guide but are not guaranteed to be error free, accurate or up to date and is not intended to be taken as advice.
Use of these CAD models and other options provided are downloaded and used entirely at your own risk and by continuing you confirm acceptance of the above.

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