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Quantity | Price (Incl GST) |
---|---|
100+ | $0.481 ($0.5532) |
500+ | $0.448 ($0.5152) |
2500+ | $0.431 ($0.4956) |
7500+ | $0.413 ($0.475) |
20000+ | $0.396 ($0.4554) |
37500+ | $0.377 ($0.4336) |
Product Information
Product Overview
The MC33172DR2G is a low power monolithic dual Operational Amplifier operates at 180μA per amplifier and offer 1.8MHz of gain bandwidth product and 2.1V/μs slew rate without the use of JFET device technology. Although this series can be operated from split supplies, it is particularly suited for single supply operation, since the common-mode input voltage includes ground potential (VEE). With a Darlington input stage, this device exhibit high input resistance, low input offset voltage and high gain. The all NPN output stage, characterized by no dead-band crossover distortion and large output voltage swing, provides high capacitance drive capability, excellent phase and gain margins, low open loop high frequency output impedance and symmetrical source/sink AC frequency response.
- Output short-circuit protection
- Wide input common mode range, including ground (VEE)
- 2mV Low input offset voltage
- 0 to 500pF Large capacitance drive capability
- 0.03% Low total harmonic distortion
- 60° Excellent phase margin
- 15dB Excellent gain margin
Applications
Industrial, Automotive
Technical Specifications
2Channels
2.1V/µs
SOIC
Low Power
2mV
Surface Mount
85°C
-
No SVHC (27-Jun-2024)
-
2 Amplifier
1.8MHz
± 1.5V to ± 22V
8Pins
-
20nA
-40°C
-
-
SOIC
1.8MHz
2.1V/µs
Technical Docs (3)
Alternatives for MC33172DR2G
2 Products Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate