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Product Information
ManufacturerONSEMI
Manufacturer Part NoMJL3281AG
Order Code1172585
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max260V
Continuous Collector Current15A
Power Dissipation200W
Transistor Case StyleTO-264
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency30MHz
DC Current Gain hFE Min175hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (27-Jun-2024)
Product Overview
The MJL3281AG is a NPN complementary Bipolar Power Transistor with superior gain linearity.
- Complement to MJL1302A
- Exceptional Safe Operating Area
- Gain Matching within 10% from 50mA to 3A
- Excellent Gain Linearity
- High BVCEO
- High Frequency
- Reliable Performance at Higher Powers
- Accurate Reproduction of Input Signal
- Greater Dynamic Range
- High Amplifier Bandwidth
Applications
Audio, Industrial, Signal Processing
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
15A
Transistor Case Style
TO-264
No. of Pins
3Pins
DC Current Gain hFE Min
175hFE
Product Range
-
MSL
-
Collector Emitter Voltage Max
260V
Power Dissipation
200W
Transistor Mounting
Through Hole
Transition Frequency
30MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.013608