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MMBT2222LT1G.
Bipolar (BJT) Single Transistor, General Purpose, NPN, 30 V, 600 mA, 225 mW, SOT-23, Surface Mount
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMMBT2222LT1G.
Order Code1653622RL
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max30V
Continuous Collector Current600mA
Power Dissipation225mW
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
No. of Pins3Pins
DC Current Gain hFE Min250hFE
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for MMBT2222LT1G.
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Product Overview
The MMBT2222LT1G is a NPN Bipolar Transistor designed for use in linear and switching applications. The device is housed in the package which is designed for lower power surface-mount applications.
- AEC-Q101 qualified and PPAP capable
Applications
Industrial, Power Management, Automotive
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
600mA
Transistor Case Style
SOT-23
No. of Pins
3Pins
Operating Temperature Max
150°C
Qualification
-
Collector Emitter Voltage Max
30V
Power Dissipation
225mW
Transistor Mounting
Surface Mount
DC Current Gain hFE Min
250hFE
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.08