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Product Information
ManufacturerONSEMI
Manufacturer Part NoMMBT5087LT1G
Order Code1459106RL
Product RangeMMBTxxxx
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max50V
Continuous Collector Current50mA
Power Dissipation225mW
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
No. of Pins3Pins
Transition Frequency40MHz
DC Current Gain hFE Min40hFE
Operating Temperature Max150°C
Product RangeMMBTxxxx
QualificationAEC-Q101
MSL-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The MMBT5087LT1G is a PNP Bipolar Transistor designed for high gain and low noise general purpose amplifier applications. The device is housed in the package which is designed for lower power surface-mount applications.
- Low RDS (ON) provides higher efficiency and extends battery life
- Saves board space
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
PNP
Continuous Collector Current
50mA
Transistor Case Style
SOT-23
No. of Pins
3Pins
DC Current Gain hFE Min
40hFE
Product Range
MMBTxxxx
MSL
-
Collector Emitter Voltage Max
50V
Power Dissipation
225mW
Transistor Mounting
Surface Mount
Transition Frequency
40MHz
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
Alternatives for MMBT5087LT1G
2 Products Found
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.08