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MUN5211DW1T1G
Bipolar Pre-Biased / Digital Transistor, BRT, Dual NPN, 50 V, 100 mA, 10 kohm, 10 kohm
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Available to Order
Manufacturer Standard Lead Time: 14 week(s)
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| Quantity | Price (Incl GST) |
|---|---|
| 3000+ | $0.073 ($0.084) |
| 9000+ | $0.059 ($0.0678) |
| 24000+ | $0.049 ($0.0564) |
| 45000+ | $0.048 ($0.0552) |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$219.00 ($251.85 inc GST)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMUN5211DW1T1G
Order Code2441570
Technical Datasheet
Transistor PolarityDual NPN
Digital Transistor PolarityDual NPN
Collector Emitter Voltage V(br)ceo50V
Collector Emitter Voltage Max NPN50V
Continuous Collector Current Ic100mA
Collector Emitter Voltage Max PNP-
Continuous Collector Current100mA
Base Input Resistor R110kohm
Resistor Ratio, R1 / R21(Ratio)
Base Emitter Resistor R210kohm
Transistor Case StyleSOT-363
RF Transistor CaseSOT-363
No. of Pins6 Pin
Transistor MountingSurface Mount
Power Dissipation385mW
Operating Temperature Max150°C
DC Current Gain hFE Min35hFE
Product Range-
Qualification-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The MUN5211DW1T1G is a dual NPN Bipolar Digital Transistor designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device.
- Simplifies circuit design
- Reduces board space
- Reduces component count
Applications
Industrial, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
Dual NPN
Collector Emitter Voltage V(br)ceo
50V
Continuous Collector Current Ic
100mA
Continuous Collector Current
100mA
Resistor Ratio, R1 / R2
1(Ratio)
Transistor Case Style
SOT-363
No. of Pins
6 Pin
Power Dissipation
385mW
DC Current Gain hFE Min
35hFE
Qualification
-
MSL
-
Digital Transistor Polarity
Dual NPN
Collector Emitter Voltage Max NPN
50V
Collector Emitter Voltage Max PNP
-
Base Input Resistor R1
10kohm
Base Emitter Resistor R2
10kohm
RF Transistor Case
SOT-363
Transistor Mounting
Surface Mount
Operating Temperature Max
150°C
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
Alternatives for MUN5211DW1T1G
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001