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MUN5213DW1T1G
Bipolar Pre-Biased / Digital Transistor, BRT, Dual NPN, 50 V, 100 mA, 47 kohm, 47 kohm
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| Quantity | Price (Incl GST) |
|---|---|
| 5+ | $0.419 ($0.4818) |
| 10+ | $0.258 ($0.2967) |
| 100+ | $0.162 ($0.1863) |
| 500+ | $0.119 ($0.1368) |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMUN5213DW1T1G
Order Code2464150
Technical Datasheet
Digital Transistor PolarityDual NPN
Transistor PolarityDual NPN
Collector Emitter Voltage V(br)ceo50V
Collector Emitter Voltage Max NPN50V
Continuous Collector Current Ic100mA
Collector Emitter Voltage Max PNP-
Continuous Collector Current100mA
Base Input Resistor R147kohm
Resistor Ratio, R1 / R21(Ratio)
Base Emitter Resistor R247kohm
RF Transistor CaseSOT-363
Transistor Case StyleSOT-363
No. of Pins6 Pin
Transistor MountingSurface Mount
Power Dissipation385mW
Operating Temperature Max150°C
DC Current Gain hFE Min80hFE
Product Range-
Qualification-
Automotive Qualification StandardAEC-Q101
Product Overview
MUN5213DW1T1G is a MUN5213DW1 series NPN transistor with a monolithic bias resistor network, and dual NPN bias resistor transistor. It is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
- Simplifies circuit design, reduces board space, reduces component count
- Collector-base voltage is 50VDC max (TA = 25°C, common for Q1 and Q2)
- Collector-emitter voltage is 50VDC max (TA = 25°C, common for Q1 and Q2)
- Collector current - continuous is 100mAdc max (TA = 25°C, common for Q1 and Q2)
- Input forward voltage is 40VDC max (TA = 25°C, common for Q1 and Q2)
- Input reverse voltage is 10VDC max (TA = 25°C, common for Q1 and Q2)
- Total device dissipation is 187mW max (TA = 25°C)
- DC current gain is 140 (IC = 5.0mA, VCE = 10V, TA = 25°C)
- Input resistor range from 32.9 to 61.1kohm (TA = 25°C, common for Q1 and Q2)
- SOT-363 package, junction temperature range from -55 to +150°C
Technical Specifications
Digital Transistor Polarity
Dual NPN
Collector Emitter Voltage V(br)ceo
50V
Continuous Collector Current Ic
100mA
Continuous Collector Current
100mA
Resistor Ratio, R1 / R2
1(Ratio)
RF Transistor Case
SOT-363
No. of Pins
6 Pin
Power Dissipation
385mW
DC Current Gain hFE Min
80hFE
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
Dual NPN
Collector Emitter Voltage Max NPN
50V
Collector Emitter Voltage Max PNP
-
Base Input Resistor R1
47kohm
Base Emitter Resistor R2
47kohm
Transistor Case Style
SOT-363
Transistor Mounting
Surface Mount
Operating Temperature Max
150°C
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001