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NDC7003P
Dual MOSFET, P Channel, 60 V, 60 V, 340 mA, 340 mA, 1.2 ohm
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| Quantity | Price (Incl GST) |
|---|---|
| 100+ | $0.540 ($0.621) |
| 500+ | $0.426 ($0.4899) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
$54.00 ($62.10 inc GST)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNDC7003P
Order Code2454057RL
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds60V
Drain Source Voltage Vds N Channel60V
Continuous Drain Current Id340mA
Drain Source Voltage Vds P Channel60V
On Resistance Rds(on)1.2ohm
Continuous Drain Current Id N Channel340mA
Continuous Drain Current Id P Channel340mA
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel1.2ohm
Drain Source On State Resistance P Channel1.2ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.9V
Transistor Case StyleSOT-23
No. of Pins6Pins
Power Dissipation Pd960mW
Power Dissipation N Channel960mW
Power Dissipation P Channel960mW
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The NDC7003P is a PowerTrench® dual P-channel MOSFET produced using Trench technology. This very high density process has been designed to minimize ON-state resistance, provide rugged and reliable performance and fast switching. This device is particularly suited for low voltage applications requiring a low current high side switch.
- Low gate charge
- Fast switching speed
- High performance Trench technology for low RDS (ON)
- Small footprint
- Low profile
Applications
Industrial, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
60V
Continuous Drain Current Id
340mA
On Resistance Rds(on)
1.2ohm
Continuous Drain Current Id P Channel
340mA
Drain Source On State Resistance N Channel
1.2ohm
Rds(on) Test Voltage
10V
Transistor Case Style
SOT-23
Power Dissipation Pd
960mW
Power Dissipation P Channel
960mW
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Channel Type
P Channel
Drain Source Voltage Vds N Channel
60V
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id N Channel
340mA
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
1.2ohm
Gate Source Threshold Voltage Max
1.9V
No. of Pins
6Pins
Power Dissipation N Channel
960mW
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000033